Plessey is a world leader in GaN-on-Silicon technology development and has been at the forefront of its commercialization in the solid state lighting market since 2012. While the technology does offer cost benefits in the production of LEDs through the use of less precious base material and the use of highly automated and depreciated semiconductor fabrication lines on large diameter silicon substrates, it is the other inherent attributes of the technology that are now beginning to impact the market. This includes taking advantage of the inherently better thermal properties of silicon over that of sapphire, together with the capability to yield large die with high voltage options through multiple on-chip junction chip architecture. These feed into Plessey’s high power LED range, delivering highly cost effective solutions to luminaire designers.
Plessey continues to innovate and take advantage of GaN-on-Silicon, for example, in exploiting the unique light emission from GaN-on-Silicon LEDs, the small scale formats that can be achieved, the incorporation of chip level optics and innovative packaging design to produce some truly unique and differentiated solutions for directional lighting and high power applications.
Better thermal performance that provides three degrees of leverage: