the heart of technology
Plessey is dedicated to the provision of world-class product solutions for ICs, Silicon-in-Package (SiP) and modules in its chosen product lines in RF, Power and Sensors. We have proven expertise in advanced RF, Mixed Signal, high performance Analogue and Digital design and layout, both through our experienced in-house design team and strategic design partners. To support our manufacturing services and customer owned design programmes Plessey also offers application specific IC (ASIC) feasibility studies including full custom and semi-custom IC design and layout capabilities.
The characterisation group is responsible both for product and process measurement and modelling. Products can be characterised over the full range of voltage, frequency and temperature (-50 to 200C). The laboratory comprises 150 square meters of dedicated floor space with two fully automated Cascade 12K probers plus a Karl Suss analytical station. Measurement resolution is better than 50fA, 1fF and a range of network analyzers enables us to characterise up to 50 GHz.
The department is staffed by engineers all holding higher degrees in physics or electronics and is actively engaged with universities in the production of novel engineering solutions and the generation of academic papers.
Plessey Semiconductors' commitment to delivering world-class product solutions relies on access to the very best resources for its research and development activities. In addition to its own teams of highly qualified and experienced engineers and scientists, this requires collaboration with leading academic and commercial partners supported by industry bodies and government agencies.
Plessey is already engaged in a number of partnership programmes ranging from process technology developments through to the integration on silicon of novel sensor designs. Some of these are already a matter of public knowledge and more information can be found through the links on this page. Announcements on several other programmes will be released over the coming months.
Plessey manufactures a wide range of high performance process technologies.
The CMOS 0.35µm process offers a wide range of options including stitching and low dark currents making it suitable for high performance imaging sensors.
Well proven process platforms as single or Dual gates to provide 3.3V, 5V Core options with many added on extensions. Alternative 3.3V core transistors for low voltage (e.g. single cell battery) or very low leakage. High resistance polysilicon resistors. Capacitors using Poly over Diffusion, Poly-Poly and/or Metal Nitride as single or double MIM formats. High voltage transistor as either simple Drain extensions or dedicated complementary components through use of thicker oxide operating at 5V to 45V.
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 0.35 Micron CMOS Process Overview |
High speed, trench isolated, double poly.
Available in a range speed (3-30GHz) and voltage (3.5-36V) options.
This is a 4.5V bipolar process with a 22 GHz npn and a lateral pnp with beta of 60 and fT of >300 MHz.
This is a complementary 3.0V bipolar process with an npn fT of 28 GHz and a vertical pnp fT of 18 GHz. Its main advantage over HG is the vertical pnp of which there are five geometries available.
This is a complementary 4.5V bipolar process with an npn fT of 19 GHz and a vertical pnp fT of 15GHz. HJB is similar to HJ but higher working voltage. It is suitable for application up to 2.5GHz.
This is a medium voltage fully complementary bipolar process containing similar process features to HJC. It has an fT of 9 GHz but the transistors are rated at the higher voltage of 12V.
This is a high voltage fully complementary bipolar process containing similar process features to HJC. It has an fT of 6 GHz but the transistors are rated at the higher voltage of 12V. The main difference is large Vebo >3.5V and 20V MIS capacitor 0.9fF/sq micron. It is suitable for very high linearity applications
SOI Complementary Bipolar HSB Process.
This is a high speed, 26V complementary SOI process for high speed amplifiers and ADSL drivers.
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| HSB Flyer -26V SOI High Speed Complementary Bipolar |
Ft ranges from 1.2 to 6GHz and voltage from 6 to 32V.
They exhibit good low current linearity, and noise performance. Resistor types are poly-silicon, base and p+ diffused. Nitride capacitors are available as well as Schottky and Zener diodes.
This is a versatile rf bipolar process providing excellent rf functionality at low cost. Features such as high value poly resistors and nitride capacitors and two layer metal allow low current circuits to be built with high packing densities.
This is a medium voltage bipolar process with similar process features to WPC but the transistors are rated at 6V in the standard case and 18V for higher voltage versions.
This is a 32V linear bipolar process with vertical NPN and lateral PNP transistors with diffused resistors, making the devices suitable for DC-DC converters, switching regulators and power management applications.
Plessey are pleased to offer FA services with an aim to help you manage and resolve material and product issues.
Plessey will provide a fast and complete service for the analysis of semiconductor failures utilising our extensive product and system knowledge.
For further details please contact us on +44 (0)1752 693276 or email fa.services@plesseysemi.com
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| Failure Analysis Flyer |