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pin diodes
Common Features:
- High resistivity N-Type Substrate
- Boron doped anode
- Phosphorous doped cathode
- Aluminium metallisation
- SiN4 tunable ARC
- SiN4 Passivation
- Diode sizes from <0.25 mm2 to >10x10 mm2
- Wide spectral response
- Wavelength range 320 - 1100 nm
| Parameter |
Conditions |
Typical value (1mm2) |
Units |
On-voltage drop
Shunt resistance
Ileak
Capacitance
Peak wavelength sensitivity
Fall time (90%-10%) |
IF=1mA
V=+/-10mV
Reverse bias 2V
Vak=0
50nm steps
Vr=1.0 |
0.67
10000
1
5.63
950
40 |
V
MOhm
pA
pF
nm
pS |
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