MicroLED Active-Matrix Display

Wafer level bonding poses significant technical challenges and had not previously been achieved between GaN-on-Silicon LED wafers and a high-density CMOS backplanes; until April 2019, when Plessey initially achieved the world’s first mechanically successful wafer to wafer. This significant success has now been followed by a fully functional, electrical and mechanical bonded, high-definition microLED Active-Matrix display.

Each Active-Matrix display requires more than two million individual electrical bonds to connect the microLED pixels to the controlling backplane.

Bonding a complete LED wafer to a CMOS backplane wafer, incorporates over 100 million micro level bonds, which produces a high brightness, fine resolution display with wide colour gamut and reduced power consumption in a smaller form-factor ideal for the next-generation of AR devices and other wearables.


Plessey’s ground-breaking IP protected GaN-on-Silicon supports the provision of next-generation display products:

  • Widely acknowledged as the route for monolithic addressable microLED arrays/pixels for hi-res and hi-lum displays
  • High brightness LEDs, microLED displays, power devices, UV LEDs, photonic integration, advanced sensors

The compelling cutting-edge display technology solutions address the challenges and limitations faced in the field of photonics.

  • Arrays with emitters as small as 1 micron.
  • Driven at low current density for greater efficiency and longevity
  • External Quantum Efficiency at least three times higher than best in class benchmarks with more improvements in the pipeline.
  • Arrays that provide at least 100,000 nits at 1 watt, that’s TV equivalent brightness at only 5mW
  • Coloured pixels fabricated in monolithic form.
  • IP protected custom CMOS back plane provides rapid developments for custom arrays.

GaN-on-Silicon microLEDs outperform incumbent display technologies:

  • Outstanding thermal performance
  • Focussed light emitting surface – do not require a backlight
  • Monolithic die/array
  • Excellent uniformity
  • Integrated electronic and optical components at wafer level
  • Immunity to burn-in or decay over time