Wafer level bonding poses significant technical challenges and had not previously been achieved between GaN-on-Silicon LED wafers and a high-density CMOS backplanes; until April 2019, when Plessey initially achieved the world’s first mechanically successful wafer to wafer. This significant success has now been followed by a fully functional, electrical and mechanical bonded, high-definition microLED Active-Matrix display.
Each Active-Matrix display requires more than two million individual electrical bonds to connect the microLED pixels to the controlling backplane.
Bonding a complete LED wafer to a CMOS backplane wafer, incorporates over 100 million micro level bonds, which produces a high brightness, fine resolution display with wide colour gamut and reduced power consumption in a smaller form-factor ideal for the next-generation of AR devices and other wearables.Contact
Plessey’s ground-breaking IP protected GaN-on-Silicon supports the provision of next-generation display products:
The compelling cutting-edge display technology solutions address the challenges and limitations faced in the field of photonics.
GaN-on-Silicon microLEDs outperform incumbent display technologies: