On Tuesday 2nd July 2019, Dr Wei Sin Tan, Director of Epitaxy and Advanced Product Development, of Plessey Semiconductors Ltd, a leading developer of award-winning optoelectronic technology solutions, will be discussing Plessey’s proprietary Gallium Nitride on Silicon (GaN-on-Si) platform for microLEDs for Augmented and Mixed Reality Devices during Micro LEDforum which will be held in Taipei, Taiwan.
LEDinside is the world’s first to hold a conference on micro LED technology, whose annual Micro LEDforum never fails to attract suppliers and investors all around the globe. Interested enthusiasts should definitely not miss this opportunity to get a hold of process bottlenecks and technological breakthroughs in the micro LED industry.
The presentation will focus on Plessey’s pioneering proprietary approach to enable manufacturing of monolithic microLED arrays using gallium nitride GaN-on-Si technologies to develop better optimised AR or MR displays applications. It will describe the problems associated with incumbent micro-display technologies and the challenges which remain to pixel sizes of eight microns and sub-pixels of approximately four micron.
Find the full agenda here.
Micro LEDforum 2019 round-up from LED Inside here.
Round-up from LED Inside here.