H* Series Process Family
H Series devices are trench isolated with shallow poly-silicon contacted emitters. Most H* series technologies provide a suite of complementary vertical NPN and PNP devices, which are well suited to 'performance analogue' applications. Resistors are available in both high and low value poly-silicon. Ft values range from 6 GHz to 30GHz with breakdown voltages (BVCEO) of between 3.5 and 12V.
Bipolar HG process
This is a 4.5V bipolar process with a 22 GHz npn and a lateral pnp with beta of 60 and fT of >300 MHz.
Bipolar HJC process
This is a complementary 3.0V bipolar process with an npn fT of 28 GHz and a vertical pnp fT of 18 GHz. Its main advantage over HG is the vertical pnp of which there are five geometries available.
Bipolar HJB process
This is a complementary 4.5V bipolar process with an npn fT of 19 GHz and a vertical pnp fT of 15GHz. HJB is similar to HJ but higher working voltage. It is suitable for application up to 2.5GHz.
Bipolar HJV process
This is a medium voltage fully complementary bipolar process containing similar process features to HJC. It has an fT of 9 GHz but the transistors are rated at the higher voltage of 12V.
Bipolar HJW process
This is a high voltage fully complementary bipolar process containing similar process features to HJC. It has an fT of 6 GHz but the transistors are rated at the higher voltage of 12V. Main difference is large Vebo >3.5V and 20V MIS capacitor 0.9fF/sq micron. It is suitable for very high linearity applications.
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