Well proven process platforms as single or Dual
gates to provide 3.3V, 5V Core options with many
added on extensions. Alternative 3.3V core transistors for low voltage
(e.g. single cell battery) or very low leakage.
High resistance polysilicon resistors. Capacitors using Poly over Diffusion, Poly-Poly
and/or Metal Nitride as single or double MIM formats.
High voltage transistor as either simple Drain
extensions or dedicated complementary
components through use of thicker oxide operating
at 5V to 45V.
