processes
Plessey Semiconductors manufactures a range of high performance CMOS, bipolar and bipolar on SOI processes ranging from low cost diffused isolation processes to double-poly, trench isolated processes with fTs in the range 7 to 45 GHz. Our foundry customers are able to select from the following process families those that are the most suitable for their planned application:
Bipolar W* Process Family
W series devices are junction isolated with single crystal emitters. They generally exhibit good low current linearity, and good noise performance. Resistor types are poly-silicon base and p+ diffused. Nitride capacitors are available as well as schottky and zener diodes. Applications include compact video/Rf , power management and tuners/demodulators.
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Bipolar H* Process Family
H Series devices are trench isolated with shallow poly-silicon contacted emitters. Most H* series technologies provide a suite of complementary vertical NPN and PNP devices, which are well suited to ?performance analogue? applications. Resistors are available in both high and low value poly-silicon. Ft values range from 6 GHz to 30GHz with breakdown voltages (BVCEO) of between 3.5 and 12V.
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Bipolar HS* Process Family
Plessey Semiconductors' HS series brings the advantages of SOI technology to the H series of processes. Higher breakdown voltages and lower parasitic capacitances are possible whilst maintaining excellent power/speed performance.
Applications include automotive and power communications (eg ADSL drivers). Breakdown voltages of greater 50V (BVCEO) are targeted for the latest family of devices.
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0.35µm CMOS Process
For details on Plessey Semiconductors 0.35µm process see below.
More about the 0.35µm CMOS process ...
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